Automotive hall effect latch sensor offers magnetic sensing

13th June 2018
Posted By : Lanna Cooper
Automotive hall effect latch sensor offers magnetic sensing

 

The DRV5013-Q1 device from Texas Instruments is a chopper-stabilised hall effect sensor that offers a magnetic sensing solution with sensitivity stability over temperature and integrated protection features.

The magnetic field is indicated via a digital bipolar latch output. The IC has an open-drain output stage with 30mA current sink capability. A wide operating voltage range from 2.7-38V with reverse polarity protection up to -22V makes the device suitable for a wide range of automotive applications.

Internal protection functions are provided for reverse supply conditions, load dump, and output short circuit or over current.

Features:

  • AEC-Q100 Qualified for Automotive Applications:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
    • Grade 1: TA = –40°C to 125°C (Q, See Device Nomenclature)
    • Grade 0: TA = –40°C to 150°C (E, See Device Nomenclature)
  • Digital Bipolar-Latch Hall Sensor
  • Superior Temperature Stability
    • BOP ±10% Over Temperature
  • Multiple Sensitivity Options (BOP / BRP)
    • 1.3 / -1.3mT (FA, see Device Nomenclature)
    • 2.7 / -2.7mT (AD, see Device Nomenclature)
    • 6 / -6mT (AG, see Device Nomenclature)
    • 12 / -12mT (BC, see Device Nomenclature)
  • Supports a Wide Voltage Range
    • 2.7-38V
    • No External Regulator Required
  • Open-Drain Output (30mA Sink)
  • Fast 35µs Power-On Time
  • Small Package and Footprint
    • Surface Mount 3-Pin SOT-23 (DBZ)
      • 2.92x2.37mm
    • Through-Hole 3-Pin TO-92 (LPG)
      • 4.00x3.15mm
  • Protection features
    • Reverse Supply Protection (up to -22V)
    • Supports up to 40V Load Dump
    • Output Short-Circuit Protection
    • Output Current Limitation
    • OUT Short to Battery Protection

Read the datasheet here.


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