Noise performance and efficiency for 40V automotive MOSFETs

3rd November 2016
Posted By : Lanna Cooper
Noise performance and efficiency for 40V automotive MOSFETs


STMicroelectronics has launched two 40V automotive-qualified MOSFETs in the latest STripFET F7 technology, which combines switching performance and energy efficiency with very low emitted noise and high immunity to false turn-on.

Key applications for the devices with current ratings up to 120A include high-current powertrain, body, or chassis and safety systems, and the switching characteristics make them well suited to use in motor drives such as in EPS (Electric Power Steering).

ST’s STripFET families use DeepGATE technology to achieve low RDS(on) per die area and low RDS(on) x gate charge (Qg), giving energy efficiency in familiar power packages. High avalanche ruggedness is another feature.

STripFET F7 enhances switching performance and maximises energy efficiency by lowering the body-diode reverse-recovery charge (Qrr) and reverse-recovery time (trr), while softer recovery minimises Electromagnetic Interference (EMI) thereby easing demand for filtering components. In addition, optimised device capacitances increase noise immunity, relieving the need for snubber circuitry, and threshold-voltage tuning ensures high false turn-on immunity without requiring a dedicated gate driver. In bridge circuits like motor drives, the soft diode recovery helps prevent shoot-through currents thereby enhancing reliability.

The 40V STL140N4F7AG and STL190N4F7AG are qualified to AEC-Q101 in the PowerFLAT 5x6 package with wettable flanks. The compact footprint and 0.8mm profile enable high system power density, while the flank design aids solder-joint reliability and lifetime as well as allowing 100% automatic optical inspection.


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