This reference design functions from a base of Silicon Carbide (SiC) MOSFETs that are driven by a C2000 microcontroller (MCU) with SiC-isolated gate drivers. The design implements three-phase interleaving and operates in Continuous Conduction Mode (CCM) to achieve a 98.46% efficiency at a 240V input voltage and 6.6kW full power.
The C2000 controller enables phase shedding and adaptive dead-time control to improve the power factor at light load.
The gate driver board (see TIDA-01605) is capable of delivering a 4A source and 6A sink peak current.
The gate driver board implements a reinforced isolation and can withstand more than 100V/ns Common-Mode Transient Immunity (CMTI).
The gate driver board also contains the two-level turnoff circuit, which protects the MOSFET from voltage overshoot during the short circuit scenario.
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