Hprobe

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Tech for ultra-fast magnetic testing of MRAM devices above 2 Tesla

Tech for ultra-fast magnetic testing of MRAM devices above 2 Tesla
Provider of turnkey semiconductor Automatic Test Equipment (ATE) for magnetic devices, Hprobe will present at the MRAM Developer Day 2019, a new technology of magnetic generator for ultra-fast testing time (less than one second) of Magnetic Tunnel Junction (MTJ) for Spin Transfer Torque (STT) MRAM devices under perpendicular magnetic field at above 2 Tesla.
1st August 2019


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ELIV 2019
16th October 2019
Germany Bonn World Conference Center