Expanding its portfolio of broadband GaN RF power transistors for electronic warfare and battlefield radio applications, NXP Semiconductors has announced six driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3,000MHz.
The GaN on SiC transistors combine high power density, ruggedness and very flat frequency response over wide bandwidths. All are input matched to optimise operating frequency range and can withstand a VSWR greater than 20:1 with 3dB overdrive without degradation. They are also part of NXP’s Product Longevity Program.
The transistors’ broadband frequency coverage from HF to S-band allows them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases amplifier size and BoM.
The 28V MMRF5011N and 50V MMRF5013N operate from 1 to 3,000MHz with RF output power up to 12W CW, 15dB gain and 60% efficiency, housed in an OM-270-8 over-moulded plastic package.
The MMRF5015NR5 operates from 1 to 2,700MHz with RF output power up to 125W CW, gain of 16dB and efficiency of 64%, housed in an OM-270-2 over-moulded plastic package.
The MMRF5019N operates from 1 to 3,000MHz with RF output power up 25W CW, gain of 18dB and efficiency of 40%, housed in an OM-270-8 over-moulded plastic package.
The MMRF5021H operates from 1 to 2,700MHz with RF output power up to 250W CW, 16dB gain and 58% efficiency, housed in a NI-780H-4L air-cavity ceramic package.
The MMRF5023N operates from 1 to 2,700MHz with RF output power up to 63W CW, 16dB gain and 60% efficiency, housed in an OM-270-2 over-moulded plastic package.
Paul Hart, Executive Vice President and General Manager, RF Power business unit, NXP, commented: “Our customers want to reduce the size, weight and power of military systems even at the device level. Our GaN transistors meet these requirements and can provide improved ruggedness, broad operating bandwidth and high efficiency.”
The transistors join NXP’s expanding portfolio of RF power transistors suited for defence systems that operate in HF, VHF, UHF and L-band radar, IFF transponders and avionics systems. In addition to GaN devices, NXP offers more than 40 LDMOS transistors covering 1 to 3,000MHz with RF output power up to 1,500W.
The six GaN transistors are either sampling or in production. Application circuits are available that support CW operation in frequencies that are within the range of 30 to 2,600MHz.