Four-leaded Kelvin device extends on-resistance range

27th June 2019
Source: UnitedSiC
Posted By : Alex Lynn
Four-leaded Kelvin device extends on-resistance range

UnitedSiC has expanded its UF3C FAST series product offering by introducing an additional 1,200V high-performance SiC FET device in a TO-247-4L four-leaded Kelvin Sense discrete package option. The UF3C120150K4S offers a typical on-resistance (RDS(on)) of 150mΩ, bringing the total number of four-leaded FAST Series devices up to six and extending the on-resistance range of the entire series from 30mΩ all the way up to 150mΩ.

With a maximum operating temperature of 175°C, the UF3C120150K4S offers excellent reverse recovery, low gate charge and low intrinsic capacitance. The ESD protected, HBM class 2 TO-247-4L package offers faster switching and much cleaner gate waveforms compared to a standard three-leaded TO-247.

The four-pin Kelvin package avoids gate ringing and false triggering which would normally require switching speeds to be limited to manage the large common source inductance of three-leaded packages. This device is ideal for EV charging, photovoltaic inverters, switch mode power supplies, power factor correction (PFC) modules, motor drives and induction heating.

UnitedSiC’s new UF3C FAST SiC series, which now totals 13 devices, is available in TO-247-3L and TO-247-4L packages with 1,200 and 650V options. The range offers very fast switching, high-power devices in a package capable of high-power dissipation based on its efficient ‘cascode’ configuration. The four-terminal Kelvin package offers easy screw or clamp mounting with very low junction-to-case thermal resistance, taking advantage of the high junction temperature capabilities of SiC.

UnitedSiC’s entire UJ3C and UF3C SiC FET portfolio is its true ‘drop-in replacement’ functionality. Designers can significantly enhance system performance, without the need to change gate drive voltage, by replacing their existing Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices with the UnitedSiC FETs.

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