UnitedSic Whitepaper Download: Origins of SiC FETs and their evolution towards the perfect switch
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Origins of SiC FETs and Their Evolution Towards the Perfect Switch

The (near) perfect electrical switch has existed for a long time of course, but we are not talking about mechanics here. Modern power conversion depends on semiconductor switches that ideally have no resistance when on, infinite resistance and voltage withstand when off and ability to switch between the two states with a simple drive, arbitrarily fast, and with no momentary power dissipation.

Wide band-gap semiconductors as high-frequency switches are enablers for better efficiency in power conversion. One example, the silicon carbide switch can be implemented as a SiC MOSFET or in a cascode configuration as a SiC FET.

This white paper traces the origins and evolution of the SiC FET to its latest generation and compares its performance with alternative technologies.

Topics include:

•     Progress towards the ideal switch
•     Early SiC device developments
•     The SiC FET – an alternative approach
•     The SiC FET ‘body diode’
•     Proving the reliability of the SiC FET
•     Other SiC FET applications
•     Progress towards enhanced performance and value
•     SiC FETS are a compelling solution

Download the white paper to learn more.


 

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