MOSFET gate driver can prevent incoming reverse current flow

Posted By : Nat Bowers
MOSFET gate driver can prevent incoming reverse current flow

Able to be controlled by 3.3V logic input, a high-side N-channel Power MOSFET gate driver has been introduced by Toshiba Electronics Europe. Providing short-circuit protection/diagnosis functions and a feature to prevent the reverse current flow to itself in case of reverse battery situation, the TPD7104AF is designed for use in automotive applications.

Specific uses include power connect/disconnect switches in start/stop systems, semiconductor relays in ECUs and junction boxes in 12V battery system.

By combining a TPD7104AF gate driver and an N-channel power MOSFET, a semiconductor relay can be easily created thanks to its built-in charge pump. By adding a shunt resistor, the short-circuit protection and diagnosis functions can also be utilised.

The TPD7104AF features a very low output leak current for reverse battery condition: IREV=-1uA (min) (@ Tj=25°C).Housed in a compact PS-8 package the device measures just 2.8x2.9mm.

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