Low side GaN driver with 60MHz/1ns speed

30th August 2018
Posted By : Enaie Azambuja
Low side GaN driver with 60MHz/1ns speed

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond.

The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively. The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8mm × 1.2mm WCSP package of LMG1020 minimises gate loop inductance and maximises power density in high-frequency applications.


  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1ns Minimum Input Pulse Width
  • Up to 60MHz Operation
  • 2.5ns Typical, 4.5ns Maximum Propagation Delay
  • 400ps Typical Rise and Fall Time
  • 7A Peak Source and 5A Peak Sink Currents
  • 5V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8mm × 1.2mm WCSP Package

Discover more here.

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