Dual TrenchFET MOSFETs suit vehicle telematics

16th December 2013
Source: Vishay
Posted By : Nat Bowers
Dual TrenchFET MOSFETs suit vehicle telematics

Believed to be one of the industry's first automotive-qualified dual MOSFETs in an asymmetric package, the SQJ940EP and SQJ942EP dual n-channel TrenchFET power MOSFETs have been announced by Vishay. Operating over a wide temperature range from -55 to +175°C, the MOSFETs provide the ruggedness and reliability required for in-vehicle applications.

Targeted at automotive applications, the SQJ940EP and SQJ942EP combine both the high- and low-side MOSFETs required for high-efficiency synchronous DC/DC buck converters. They are supplied in a compact 5x6 mm asymmetric PowerPAK SO-8L package. Saving space compared to discrete MOSFETs, the asymmetric package features a larger low-side MOSFET for lower conduction losses.

Offering a low-side maximum on-resistance down to 6.4mΩ, the components are particularly suited to vehicle telematics, such as radio and GPS systems. The SQJ940EP and SQJ942EP offer designers a choice of different on-resistance values: the SQJ940EP provides low maximum on-resistance of 6.4 mΩ for the Channel 2 low-side MOSFET and 16 mΩ for the Channel 1 high-side MOSFET (at the 10 V rating); the SQJ942EP provides maximum on-resistance of 11 mΩ for the low-side MOSFET and 22 mΩ for the high-side MOSFET (also at the 10 V rating). The SQJ940EP offers 31 % lower low-side on-resistance when compared to dual symmetrical solutions.

The Vishay MOSFETs are RoHS-compliant, halogen-free, and 100% Rg- and UIS-tested. With lead times of 14 to 16 weeks for larger orders, the SQJ940EP and SQJ942EP are available now for sampling and in production quantities.

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