Dual low-side driver IC suits SMPS in EVs & HEVs

Posted By : Nat Bowers
Dual low-side driver IC suits SMPS in EVs & HEVs

Designed to drive large IGBT and MOSFET gates in modules or discrete packages, an automotive-qualified dual low-side driver IC has been introduced by International Rectifier. Extremely low output impedance minimises power losses, making the AUIRB24427S suitable for SMPS applications in EVs, HEVs and high power industrial converters.

Operating over a temperature range from -40 to +125°C and a supply voltage of 12.5-24V, the driver IC features very high output current of 6A per channel and maximum output resistance of 650mΩ sink and source at 125°C. This makes it able to effectively drive large size IGBTs and MOSFETs used in high power SMPS applications such as primary or secondary side driving in HEV power supply stages. Power dissipation is reduced as the rail-to-rail output stage uses high-side P-Channel MOSFETs enabling a low internal dropout voltage.

In order to enable operation at higher ambient temperatures, the lead-free and RoHS compliant AUIRB24427S is available in a thermally enhanced PSOIC-8N package. This delivers much higher thermal dissipation compared to standard DIL SMD packages.

Available now for sampling and in production quantities, the AUIRB24427S high current dual low-side driver IC is priced from $0.78 each in 10,000 unit quantities.


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ELIV 2019
16th October 2019
Germany Bonn World Conference Center