Automotive power MOSFETs housed in low resistance package

Posted By : Lanna Cooper
Automotive power MOSFETs housed in low resistance package

Toshiba Electronics has released two new MOSFETs housed in the small low resistance SOP Advance (WF) package in 5x6mm size, as new additions to the automotive 40V N-channel power MOSFET series. The TPHR7904PB and TPH1R104PB are AEC-Q101 qualified and are intended for a variety of automotive applications including Electric Power Steering (EPS), load switches, electric pumps, fans and more.

Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low resistance package, the new MOSFETs provide on-resistance (RDS(ON)) as low as max 0.79mΩ at VGS=10V, thereby reducing conduction losses.

The devices specified with a Drain-Source voltage (VDSS) of 40V and can handle drain currents (ID) up to 150ADC. The U-MOS IX-H design also lowers switching noise, helping to reduce electromagnetic interference (EMI).

The SOP Advance (WF) package employs a wettable flank terminal structure, which enables automated visual inspection of solder joints on printed circuit boards, a key requirement for automotive quality compliance.

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