Automotive power MOSFETs expand with low resistance device

Posted By : Alice Matthews
Automotive power MOSFETs expand with low resistance device

The family of automotive power MOSFETs from Toshiba Electronics Europe has expanded with the TK1R5R04PB - the first device in its low-resistance D2PAK+ package. While the D2PAK+ has the same footprint as a conventional D2PAK (or TO-263) package, it offers reduced package resistance. This is thanks to a source pin that is much wider near to the mould surface than that of a conventional D2PAK.

The TK1R5R04PB is rated for 40V and 160A and has a maximum on resistance of 1.5mΩ (VGS = 10V). Minimum and maximum Voltage threshold ratings (Vth) are 2v and 3V respectively.

Toshiba’s latest UMOS IX-H wafer process has been used to produce the TK1R5R04PB. U-MOS IX-H has a switching ripple suppression capability and can contribute to EMI noise reduction in applications.

Target applications for the device include automotive pumps, fans, DC/DC converters and load switches.

The TK1R5R04PB will conform with AEC-Q101 automotive level qualification requirements.

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