Power

Automotive-grade TVS diode arrays ensure maximum reliability

24th April 2018
Lanna Deamer
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Datasheets

Littelfuse has introduced two series of AEC-Q101-qualified TVS Diode Arrays (SPA Diodes) designed to provide options for very fast acting, high performance over-voltage protection devices. The AQHV and AQHV-C series are designed to provide very fast acting, high performance over-voltage protection devices well suited for power interfaces, passenger charging interfaces, and well as LED lighting modules, and low speed I/Os.

The 200W discrete AQHV Series (unidirectional) and AQHV-C (bidirectional) protect sensitive equipment from damage due to Electrostatic Discharge (ESD) and other overvoltage transients.

Both series can safely absorb repetitive ESD strikes above the maximum level required by international standards without performance degradation and safely dissipate up to 8A (for AQHV12) of induced surge current with very low clamping voltages.

Typical applications for AQHV and AQHV-C Series TVS Diode Arrays include:

  • ESD protection for automotive electronics.
  • LED lighting modules.
  • Mobile/handheld devices.
  • CAN BUS (drive-by-wire).
  • LIN BUS. RS-232 and RS-485 interfaces.
  • General-purpose low speed I/Os.
  • Portable instrumentation.

“As AEC-Q101 qualified devices, the AQHV and AQHV-C Series can ensure maximum reliability in the harshest environments,” said Tim Micun, Director of TVS Diode Arrays (SPA diodes) at Littelfuse.

"That makes them a great option for designers who need to replace passive ESD protection or to ‘sprinkle’ protection devices around a printed circuit board.”

AQHV and AQHV-C Series TVS Diode Arrays offer these key benefits:

  • ESD protection up to ±30kV and surge protection up to 8A helps equipment manufacturers comply with and exceed industry standards, extending equipment life and system up-time.
  • Low dynamic resistance provides up to 60% lower clamping voltages than alternative technologies, offering an ideal solution for protecting modern electronics filled with small-geometry ICs.
  • The silicon diodes used in their construction are capable of handling more than 1,000 ESD strikes or surge transients without performance degradation in contrast with alternative technologies that have an inherent wear-out factor.

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