Automotive gate driver uses two external N-channel MOSFETs

30th May 2018
Posted By : Enaie Azambuja
Automotive gate driver uses two external N-channel MOSFETs

Texas Instruments' DRV870xD-Q1 family of devices is a half-bridge gate driver that uses two external N-channel MOSFETs targeted to drive unidirectional brushed-DC motors or solenoid loads. The PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.

The DRV870xD-Q1 family of devices drives both high-side and low-side FETs with a 10.5-V VGS gate drive. The gate-drive current for all external FETs is configurable with a single external resistor or through the serial peripheral interface (SPI).

A low-power sleep mode is provided which shuts down internal circuitry to achieve a very-low quiescent-current draw.

Features
AEC-Q100 Qualified for Automotive Applications
Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature
Single Half-Bridge Gate Driver
Drives Two External N-Channel MOSFETs
Supports 100% PWM Duty Cycle
5.5- to 45-V Operating Supply-Voltage Range
PWM Control Interface
Serial Interface for Configuration (DRV8703D-Q1)
Adjustable Gate Drive For Slew-Rate Control
Supports 1.8-V, 3.3-V, and 5-V logic inputs
Current-Shunt Amplifier
Integrated PWM Current Regulation
Low-Power Sleep Mode
Small Package and Footprint
32-Pin VQFN
5mm × 5mm
Wettable Flanks Package
Protection Features
Supply Undervoltage Lockout (UVLO)
Charge-Pump Undervoltage (CPUV) Lockout
Overcurrent Protection (OCP)
Gate-Driver Fault (GDF)
Thermal Shutdown (TSD)
Watchdog Timer (DRV8703D-Q1)
Fault-Condition Output (nFAULT)

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