Suitable for use in automotive applications such as reverse battery protection and motor control, a -40V P-channel power MOSFET has been unveiled by Toshiba Electronics Europe. The TJ200F04M3L conforms to the AEC-Q101 automotive standard qualification requirements and offers an improved design which is capable of reducing conduction losses.
The power MOSFET achieves class leading low RDS(ON) by mounting a chip fabricated with Toshiba’s U-MOS VI trench process in a TO-220SM (W) package, which utilises a copper connector. The low RDS(ON) contributes to reduced conduction losses in electronic devices.
The TJ200F04M3L offers absolute maximum ratings of VDSS = -40V, ID = -200A and RDS(ON) = 1.8mΩ at VGS = 10V. The MOSFET is capable of operating at a maximum channel temperature of +175°C.