SiC MOSFET reduces EV drive-train inverter losses by 78%
A 900V, 10mΩ MOSFET rated for 196A of continuous drain current at a case temperature of 25°C has been introduced by Wolfspeed. This device enables the reduction of EV drive-train inverter losses by 78% based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design.
Recently Wolfspeed supplied Ford Motor Company – in a collaboration with the US DoE – with a full-SiC, 400A power module designed around the 900V, 10mΩ chip. The module, designed and produced by Wolfspeed, contains four MOSFETs connected in parallel to achieved a 2.5mΩ Rds(on). Wolfspeed engineers have since demonstrated the capability to use these chips to create an 800A, 1.25Ω module.
“With the commercial release of the 900V 10mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion,” said John Palmour, CTO of Wolfspeed. “With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in onboard chargers, offboard chargers, and now EV drive trains.”
Commercially qualified and rated for a maximum operating temperature of 175˚C, Wolfspeed’s new chip offers high-reliability in harsh environments, like those found in vehicle drive-trains.
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Panasonic
Panasonic PhotoMOS® Photovoltaic MOSFET High-Power Drivers
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