Since Season 3 (2016/2017), ROHM Semiconductor has been official technology partner of the VENTURI Formula E team. ROHM bring its SiC (Silicon carbide) power devices, which it claims to be a cutting edge technology for e-mobility, to the race track to increase the effectiveness of the power electronics system in the VENTURI Formula E cars. Formula E is the leading racing event for electric vehicles.
The collaboration between ROHM and VENTURI in Formula E highlights the key to success in the all-electric racing series - power management. The challenge of Formula E is to find the most efficient way of using the energy provided by the battery and applying it on the road.
To do this, VENTURI initiated a partnership with ROHM, who developed new power semiconductor technology using Silicon Carbide (SiC). This material can withstand much higher electric fields than conventional Silicon, which results in extremely low losses of power and higher temperature resistance for their inverter. Thus, ROHM and VENTURI hope to gain an edge over the competition while also pushing forward the development of new technical solutions to increase power conversion efficiency.
For the first time ever, ROHM Semiconductor has become a global sponsor for the brand. This partnership is a big step for the semiconductor manufacturer, which is based in Kyoto, Japan, and exemplifies their commitment to further development of power and energy management systems.
Bringing SiC technology to Formula E and to e-mobility in general is an important step in changing drive technology.
Furthermore, ROHM is taking an active role in revolutionising energy policy. When the presentation with VENTURI illustrates how effective the new technology works, SiC power semiconductors will make their way into serial production and benefit both industry and society as a whole.