On 1st February, Wolfspeed and ZF announced a strategic partnership to target future silicon carbide (SiC) semiconductor systems and devices for mobility, industrial and energy applications.

It has been announced that Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1,700V SiC Schottky diode, which is optimised for renewable energy, industrial power and electric vehicle charging applications including solar power and wind turbine inverters, off-board chargers and uninterruptible power supply (UPS). 

Wolfspeed is amplifying RF amplifier technology, as well as showcasing the GaN-on-SiC commercial foundry services, at CSICS 2017, enabling RF design engineers to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.

Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), Wolfspeed, has introduced a new series of 28V GaN HEMT RF power devices. These new devices are capable of higher frequency operation to 8GHz with increased efficiency and higher gain. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and...

Global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, Wolfspeed, has extended its family of 50V GaN HEMT RF power devices by adding a 250W part with a frequency range up to 3.0GHz and the highest efficiency of any comparably-rated GaN device available.

Wolfspeed, supplier of silicon carbide (SiC) power products — including SiC MOSFETs, Schottky diodes, and modules — has advanced the development of high efficiency data centre power supplies through the implementation of an innovative totem-pole PFC topology that employs its latest low-inductance SiC MOSFETs to exceed an 80+ Titanium rating, which is critical for reducing the overall power consumption for data centres, estimated to be...

Wide bandgap semiconductor technology company, Wolfspeed, has introduced two new GaN MMICs, the first 50V GaN devices specifically designed for S-band radar (2.7-3.5GHz) applications. These new 50V GaN MMICs enable radar systems designers to reduce time to market with a less costly, less complex, 50V power amplifier line-up, while delivering what it claims to be the most efficiency possible.

Wolfspeed will be showcasing its latest SiC MOSFET technology at this year’s Applied Power Electronics Conference and Exposition (APEC 2017). The annual conference, which will take place March 26 – 30 in Tampa, FL, is globally recognized as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting at seven conference sessi...

Wolfspeed has expanded its innovative C3M platform through the introduction of a 1200V, 75mΩ MOSFET in its recently released low-inductance discrete packaging. The new device simplifies designs and enables an increase in frequency while maintaining efficiency, lowering system cost, reducing circuit EMI, and enabling 99% efficiency levels in three-phase power factor correction circuits.

Wolfspeed has added four new SiC Schottky diodes to its portfolio, further extending what was already recognised as the industry’s most comprehensive offering. Developed in response to both individual customer requests and the power supply industry’s continuous demand for components with larger nominal current ratings, the new 650V and 1200V Cree Z-Rec SiC Schottky diodes enable high efficiency power conversion systems with improved r...

A 900V, 10mΩ MOSFET rated for 196A of continuous drain current at a case temperature of 25°C has been introduced by Wolfspeed. This device enables the reduction of EV drive-train inverter losses by 78% based on EPA combined city/highway mileage standards. This efficiency improvement offers designers new options in terms of range, battery usage and vehicle design.

  The 2016 ECN IMPACT Award was presented to Wolfspeed in the passive components and discrete semiconductors category for its CAS325M12HM2 high performance, 1200V, 325A, 62mm SiC half-bridge module. 

A 1000V MOSFET has been introduced by Wolfspeed that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. 

Progressive system-level design must be adopted, urges Guy Moxey, Wolfspeed, in order to capitalise on the advantages that silicon carbide (SiC) devices provide for power design

This year’s European Conference on Silicon Carbide and Related Materials (ECSCRM) will see Wolfspeed, a Cree company, sponsoring, exhibiting, presenting and hosting and industry social event. A biannual scientific forum that invites international specialists to explore the latest achievements in the field of wide bandgap semiconductors, and especially silicon carbide, ECSCRM 2016 will take place 25th-29th September, in Halkidiki, Greec...

  Designed for high current applications, Wolfspeed’s all-SiC power module in a 62mm module targets converters, inverters, motor drives, industrial electronics and EV systems.