Opto-isolated IGBT gate pre-driver IC suits EVs & HEVs

Posted By : Nat Bowers
Opto-isolated IGBT gate pre-driver IC suits EVs & HEVs

Toshiba Electronics Europe has announced an opto-isolated IGBT gate pre-driver IC with enhanced protection functions for the in-vehicle inverters of EVs and HEVs. Inverter control is used to drive the motors of electric and hybrid vehicles efficiently. As the control and drive functions have different operating voltages, they must be isolated from each other with a device such as a photocoupler.

Toshiba’s TB9150FNG is a compact, versatile, high-performance IGBT gate pre-driver IC that can address this issue while providing the necessary protection functionality.

The TB9150FNG integrates a photocoupler that secures high-level isolation between control (the primary side) and drive (the secondary side). It also incorporates a highly precise IGBT temperature detection function, a flyback transformer controller and a short circuit detection function (current sense and DESAT2 monitor) that all contribute to system downsizing.

Supplied in an SSOP48 package, the TB9150FNG measures just 10.4x12.5x2.0mm and operates over a temperature range from -40 to +125°C.

Sample shipments of the TB9150FNG started in April, with mass production scheduled for 2018.


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ELIV 2019
16th October 2019
Germany Bonn World Conference Center