Claimed to be the industry's first bipolar transistors in the 5x6x1mm low profile LFPAK56 (SOT669) SMD power plastic package, NXP Semiconductors has announced the PHPT60603NY, PHPT60603PY, PHPT61003NY, PHPT61003PY, PHPT61002NYC and PHPT61002PYC. AEC-Q101 qualified, the 60 and 100V low saturation transistors target automotive applications in ambient temperatures of up to 175°C.
Featuring a collector current of up to 3A and a peak collector current of up to 8A, the transistors provide power dissipation capabilities of 3W and low VCEsat values. This thermal and electrical performance is comparable to bipolar transistors in much larger power packages such as DPAK, with less than half the footprint. Typical applications for the devices include backlighting, motor drive and general power management.
High density is achieved by the solid copper clip and collector tab design of NXP's LFPAK package, significantly reducing the package’s electrical and thermal resistance. It also eliminates wire-bonding used in many competitor DPAK types, enabling higher mechanical ruggedness and reliability.
Joachim Stange, Product Manager, Transistors, NXP Semiconductors, comments: “We believe that NXP’s LFPAK will become the standard in compact power packages for bipolar transistors - just as NXP LFPAK is the industry benchmark for MOSFETs today. The automotive market in particular is asking for bipolar transistors with this packaging option to take the next step in developing modules where small size, high power density and efficiency are key.”
The bipolar low VCEsat transistors in LFPAK56 are available in high-volume production.