NXP Semiconductors N.V. has set a benchmark in RF power performance with four new LDMOS transistors. The new transistors aim to deliver best-in class performance for defense radar and Identification Friend or Foe (IFF) systems operating between 900 and 1400MHz. Several defense contractors are currently developing and evaluating systems with these high capability transistors.
The high RF output power from the four new transistors help the U.S. Department of Defense (DoD) and its international partners reach goals to reduce size, weight and power (SWaP) of its platforms by allowing amplifiers to use fewer devices to achieve a desired performance. This not only reduces amplifier size and board space but the bill of material (BOM).
"These RF power transistors are excellent examples of NXP's commitment to meet stringent requirements of the defense market," said Pierre Piel senior director for RF power industrial technologies at NXP. "These transistors allow designers of radar and IFF systems to deliver greater performance making them a perfect fit for next generation defense platforms."
MMRF1312H/HS – Typical applications are IFF Mode S interrogators, L-band secondary surveillance radars, and distance measuring equipment (DME). This device operates from 900 to 1215MHz at 52V with a peak RF output power of at least 1200W at P3dB, gain of 17.3dB and efficiency of 54%.
MMRF1314H/HS – Typical application is L-band primary radar. This device operates from 1200 to 1400MHz at 52V with a peak RF output power of at least 1000W, gain of 15.5dB and efficiency of 46.5%.
MMRF1317H/HS – Typical applications are IFF Mode S interrogators and secondary surveillance radars. This device operates from 1030 to 1090MHz at 50V with a peak RF output power of at least 1500W at P3dB (the highest power available at this frequency range using LDMOS technology), gain of 18.9dB and efficiency of 56%.
MMRF2010N/GN – Typical applications are IFF Mode S interrogators and secondary surveillance radars. This device operates from 1030 to 1090MHz at 50V with a peak RF output power of 250W, gain of 32.5dB and efficiency of 59.1%.
The MMRF2010N/GN is housed in an over-molded plastic package and the three other transistors are housed in ceramic air-cavity packages.
RF amplifiers used in defense systems are often subject to potentially damaging conditions such as high impedance mismatches (high VSWR) and input overdrive caused by co-site interference. However, the four new transistors are designed to excel under these conditions. For example, the MMRF1312H/HS and MMRF1314H/HS will operate into a VSWR greater than 20:1 and the MMRF1317H/HS and the MMRF2010N will operate into a VSWR greater than 10:1 at 20 percent higher than rated supply voltage and twice their rated input power without damage.
NXP's high power RF transistorsexpand the LDMOS and GaN portfolio intended for defense applications. All of these devices are part of the company's Product Longevity Program guaranteeing their availability for 15 years.
The MMRF1312H/HS, MMRF1314H/HS, MMRF1317H/HS and MMRF2010N RF power LDMOS transistors are in production. Reference designs and other enablement tools are available. For pricing or additional information, please contact your local NXP sales office or NXP approved distributor.