Devices provide low ON-resistance for load switch applications

Posted By : Daisy Stapley-Bunten
Devices provide low ON-resistance for load switch applications

Two compact, N-Channel MOSFETs for load switching in automotive applications have been announced by Toshiba. The 60V SSM3K341R and the 100V SSM3K361R deliver class leading low ON-resistance and are qualified according to the AEC-Q101 standard. As a result, they are suitable for use in power management, including DC/DC converter or load switch applications which are of increasing importance for the ever developing electronic systems in vehicles.

Increased industry demand for power-saving LEDs has seen growth in requirements for the N-channel MOSFETs that are used as switches for LED drivers. Toshiba’s SSM3K341R and SSM3K361R small-package MOSFETS address this demand class-leading typical RDS(ON) ratings (at VGS = 4.5V) of 36 and 65mΩ respectively. In addition, both devices support a maximum channel temperature of 175°C, which enables wide spread use in a range of automotive applications.

Both new devices reduce heat dissipation resulting from turn-on losses by approximately 65% against Toshiba previous products. In addition, the MOSFETs are housed in compact SOT-23F flat lead type packages. These reduce PCB footprint by approximately 64% compared to a conventional SOT-89 package, while maintaining a maximum level of 2.4W power dissipation.


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Smart Mobility Executive Forum
12th February 2018
Germany Berlin